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PPJS6414 20V N-Channel Enhancement Mode MOSFET Voltage 20 V Current 6.6A Features RDS(ON) , [email protected], [email protected]<36mΩ RDS(ON) , [email protected], [email protected]<52mΩ RDS(ON) , [email protected], [email protected]<92mΩ Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application
PPJS6400 30V N-Channel Enhancement Mode MOSFET Voltage 30 V Current 6.4A Features RDS(ON) , VGS@10V, [email protected]<37mΩ RDS(ON) , [email protected], [email protected]<43mΩ RDS(ON) , [email protected], [email protected]<59mΩ Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application,
PPJS6405 30V P-Channel Enhancement Mode MOSFET Voltage -30 V Current -4.6A Features RDS(ON) , VGS@-10V, [email protected]<72mΩ RDS(ON) , [email protected], [email protected]<96mΩ Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc Lead free in compliance w
PPJS6401 30V P-Channel Enhancement Mode MOSFET Voltage -30 V Current -4.6A Features RDS(ON) , VGS@-10V, [email protected]<71mΩ RDS(ON) , [email protected], [email protected]<81mΩ RDS(ON) , [email protected], [email protected]<110mΩ Advanced Trench Process Technology Specially Designed for Switch Load, PWM Appl
PPJS6404 30V N-Channel Enhancement Mode MOSFET Voltage 30 V Current 6.8A Features RDS(ON) , VGS@10V, [email protected]<32mΩ RDS(ON) , [email protected],[email protected]<47mΩ Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc.. Lead free in compliance with EU
PPJS6415AE 20V P-Channel Enhancement Mode MOSFET – ESD Protected Voltage -20 V Current -4.9A SOT-23 6L-1 Features RDS(ON) , VGS@-10V, [email protected]<60mΩ RDS(ON) , [email protected], [email protected]<70mΩ RDS(ON) , [email protected], [email protected]<96mΩ Advanced Trench Process Technology Specially De
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