PJP8N60
Pan Jit International
600V N-Channel Enhancement Mode MOSFETPJP8N60 / PJF8N60
600V N-Channel Enhancement Mode MOSFET
FEATURES
• 8A , 600V, RDS(ON)=1.2Ω@VGS=10V, ID=4.0A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for
PJP8NA50
500V N-Channel MOSFETPPJU8NA50 / PJD8NA50 / PJP8NA50 / PJF8NA50
500V N-Channel MOSFET
Voltage
500 V Current
8A
Features
RDS(ON), VGS@10V,ID@4A<0.9Ω High switching speed Improved dv/dt capability Low Gate Charge Low reverse transfer capacitance Lead free in compliance with EU RoHS 2011/65/EU
Pan Jit International
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