PJP7N65
Pan Jit International
650V N-Channel Enhancement Mode MOSFETPJP7N65 / PJF7N65
650V N-Channel Enhancement Mode MOSFET
FEATURES
• 7A , 650V, RDS(ON)=1.4Ω@VGS=10V, ID=3.5A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for
PJP7NA80
800V N-Channel MOSFETPPJP7NA80 / PJF7NA80
800V N-Channel MOSFET
Voltage
800 V Current
7A
Features
RDS(ON), VGS@10V,ID@ 3.5A<1.55Ω High switching speed Improved dv/dt capability Low Gate Charge Low reverse transfer capacitance Lead free in compliance with EU RoHS 2011/65/EU directive. Gr
Pan Jit International
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PJP7N60
600V N-Channel Enhancement Mode MOSFETPJP7N60 / PJF7N60
600V N-Channel Enhancement Mode MOSFET
FEATURES
• 7A , 600V, RDS(ON)=1.2Ω@VGS=10V, ID=3.5A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In c
Pan Jit International
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