PJP1N80
Pan Jit International
800V N-Channel Enhancement Mode MOSFETPJP1N80 / PJU1N80
800V N-Channel Enhancement Mode MOSFET
FEATURES
• 1A, 800V, RDS(ON)=16Ω@VGS=10V, ID=0.5A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC
PJP1NA80
800V N-Channel MOSFETPPJW1NA80 / PJU1NA80 / PJD1NA80 / PJP1NA80
800V N-Channel MOSFET
Voltage
800 V Current
1A
Features
RDS(ON), VGS@10V,[email protected]<16Ω High switching speed Improved dv/dt capability Low Gate Charge Low reverse transfer capacitance Lead free in compliance with EU RoHS 2011/65
Pan Jit International
PDF