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Datasheet PJP10N65 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | PJP10N65 | 650V N-Channel Enhancement Mode MOSFET PJP10N65 / PJF10N65
650V N-Channel Enhancement Mode MOSFET
FEATURES
• 10A , 650V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS I |  Pan Jit International | mosfet |
PJP Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | PJP10N60 | 600V N-Channel Enhancement Mode MOSFET PJP10N60 / PJF10N60
600V N-Channel Enhancement Mode MOSFET
FEATURES
• 10A , 600V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS I Pan Jit International mosfet | | |
| 2 | PJP10N65 | 650V N-Channel Enhancement Mode MOSFET PJP10N65 / PJF10N65
650V N-Channel Enhancement Mode MOSFET
FEATURES
• 10A , 650V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS I Pan Jit International mosfet | | |
| 3 | PJP12N65 | 650V N-Channel Enhancement Mode MOSFET PJP12N65 / PJF12N65
650V N-Channel Enhancement Mode MOSFET
FEATURES
• 12A , 650V, RDS(ON)=0.8Ω@VGS=10V, ID=6.0A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS I Pan Jit International mosfet | | |
| 4 | PJP13N50 | 500V N-Channel Enhancement Mode MOSFET PJP13N50 / PJF13N50
500V N-Channel Enhancement Mode MOSFET
FEATURES
• 13A , 500V, RDS(ON)=0.52Ω@VGS=10V, ID=6.5A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS Pan Jit International mosfet | | |
| 5 | PJP1N80 | 800V N-Channel Enhancement Mode MOSFET PJP1N80 / PJU1N80
800V N-Channel Enhancement Mode MOSFET
FEATURES
• 1A, 800V, RDS(ON)=16Ω@VGS=10V, ID=0.5A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In com Pan Jit International mosfet | | |
| 6 | PJP1NA80 | 800V N-Channel MOSFET PPJW1NA80 / PJU1NA80 / PJD1NA80 / PJP1NA80
800V N-Channel MOSFET
Voltage
800 V Current
1A
Features
RDS(ON), VGS@10V,[email protected]<16Ω High switching speed Improved dv/dt capability Low Gate Charge Low reverse transfer capacitance Lead free in compliance with EU RoHS 2011/65 Pan Jit International mosfet | | |
| 7 | PJP24N10 | 100V N-Channel Enhancement Mode MOSFET PJP24N10 / PJF24N10
100V N-Channel Enhancement Mode MOSFET
FEATURES
• RDS(ON), VGS@10V,IDS@30A=24mΩ • Low On Resistance • Excellent Gate Charge x RDS(ON) Product ( FOM ) • Fully Characterized Avalanche Voltage and Current • Specially Designed for AC Adapter, High-Frequency Switch and Syn Pan Jit International mosfet | |
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