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PPJE8472B 60V N-Channel Enhancement Mode MOSFET Voltage 60 V Current 200mA Features RDS(ON) , VGS@10V, ID@600mA<3Ω RDS(ON) , [email protected], ID@200mA<4Ω Advanced Trench Process Technology Specially Designed for Relay driver, Speed line drive, etc. Lead free in compliance with
PPJE8438 50V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 50 V Current 360mA SOT-523 Features RDS(ON) , VGS@10V, ID@500mA<1.45Ω RDS(ON) , [email protected], ID@200mA<1.95Ω RDS(ON) , [email protected], ID@100mA<4.0Ω RDS(ON) , [email protected], ID@10mA<4.0Ω(typ.) Advanced Trenc
PPJE8412 30V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 30 V Current 350mA SOT-523 Features RDS(ON) , [email protected], ID@350mA<1.2Ω RDS(ON) , [email protected], ID@200mA<1.6Ω RDS(ON) , [email protected], ID@80mA<2.3Ω RDS(ON) , [email protected], ID@10mA<2.5Ω(typ.) Specially Designed
PPJE8407 20V P-Channel Enhancement Mode MOSFET Voltage -20 V Current -500mA Features Low Voltage Drive (1.2V). Advanced Trench Process Technology Specially Designed for Load switch, PWM Application, etc. ESD Protected Lead free in compliance with EU RoHS 2011/65/EU directive
PPJE8404 30V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 30 V Current 0.6A SOT-523 Features RDS(ON) , VGS@4,5V, [email protected]<220mΩ RDS(ON) , [email protected], [email protected]<290mΩ RDS(ON) , [email protected], [email protected]<600mΩ Advanced Trench Process Technology Specially Designed fo
PPJE8400 20V N-Channel Enhancement Mode MOSFET Voltage 20 V Current 1.1A Features RDS(ON) , [email protected], [email protected]<88mΩ RDS(ON) , [email protected], [email protected]<100mΩ RDS(ON) , [email protected], [email protected]<130mΩ Advanced Trench Process Technology Specially Designed for Switch Load, PWM Applicati
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