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PPJA3403 30V P-Channel Enhancement Mode MOSFET Voltage -30 V Current -3.1A Features RDS(ON) , VGS@-10V, [email protected]<98mΩ RDS(ON) , [email protected], [email protected]<114mΩ RDS(ON) , [email protected], [email protected]<165mΩ Advanced Trench Process Technology Specially Designed for Switch Load, PWM App
PPJA3472B 60V N-Channel Enhancement Mode MOSFET Voltage 60 V Current 300mA Features RDS(ON) , VGS@10V, ID@600mA<3Ω RDS(ON) , [email protected], ID@200mA<4Ω Advanced Trench Process Technology Specially Designed for Relay driver, Speed line drive, etc. Lead free in compliance with
PPJA3401 30V P-Channel Enhancement Mode MOSFET Voltage -30 V Current -3.6A Features RDS(ON) , VGS@-10V, [email protected]<72mΩ RDS(ON) , [email protected], [email protected]<82mΩ RDS(ON) , [email protected], [email protected]<115mΩ Advanced Trench Process Technology Specially Designed for Switch Load, PWM Appl
PPJA3400 30V N-Channel Enhancement Mode MOSFET Voltage 30 V Current 4.9A Features RDS(ON) , VGS@10V, [email protected]<38mΩ RDS(ON) , [email protected], [email protected]<44mΩA RDS(ON) , [email protected], [email protected]<60mΩ Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application,
PPJA3432 30V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 30 V Current 1.6A SOT-23 Features RDS(ON) , VGS@4,5V, [email protected]<200mΩ RDS(ON) , [email protected], [email protected]<270mΩ RDS(ON) , [email protected], [email protected]<570mΩ Advanced Trench Process Technology Specially Designed for
PPJA3413 20V P-Channel Enhancement Mode MOSFET Voltage -20 V Current -3.4A Features RDS(ON) , [email protected], [email protected]<82mΩ RDS(ON) , [email protected], [email protected]<110mΩ RDS(ON) , [email protected], [email protected]<146mΩ Advanced Trench Process Technology Specially Designed for Switch Load, PWM Ap
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