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PJDLC05W VOLTAGE 5 Volts POWER 120 Watts ULTRA LOW CAPACITANCE DUAL TRANSIET VOLTAGE SUPPRESSOR FOR HIGH SPEED DATA LINES This transient overvoltage suppressor is intended to prodect sensitive equipment againset electrostatic discharge events as well to offer a minmum lnsertion loss in data transmis
PJSMDA05,05C SERIES QUAD TVS/ZENER ARRAY FOR ESD AND LATCH-UP PROTECTION This Quad TVS/Zener Array family have been designed to Protect Sensitive Equipment against ESD and to prevent Latch-Up events in CMOS circuitry operating at 5V, 12V, 15V and 24V for Unidirectional and Bi-directional protection
PJP10N60 / PJF10N60 600V N-Channel Enhancement Mode MOSFET FEATURES • 10A , 600V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS I
PJSR12 Low Capacitance TVS and Diode Array This diode array is configured to protect up to two data transmission lines acting as a line terminator, minimizing overshoot and undershoot conditions due to bus impedance as well as protect against over-voltage events as electrostatic discharges. Addition
PPJA3432 30V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 30 V Current 1.6A SOT-23 Features RDS(ON) , VGS@4,5V, [email protected]<200mΩ RDS(ON) , [email protected], [email protected]<270mΩ RDS(ON) , [email protected], [email protected]<570mΩ Advanced Trench Process Technology Specially Designed for
PJP7N65 / PJF7N65 650V N-Channel Enhancement Mode MOSFET FEATURES • 7A , 650V, RDS(ON)=1.4Ω@VGS=10V, ID=3.5A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In c
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