파트넘버.co.kr PJ99 데이터시트 검색

PJ99 전자부품 데이터시트



PJ99 전자부품 회로 및
기능 검색 결과



PJ99  

INTERFET
INTERFET

PJ99

Silicon Junction Field-Effect Transistor

F-30 01/99 PJ99 Process Silicon Junction Field-Effect Transistor ¥ General Purpose Amplifier ¥ Analog Switch Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175




관련 부품 PJ 상세설명

PJDLC05W  

  
ULTRA LOW CAPACITANCE DUAL TRANSIET VOLTAGE SUPPRESSOR

PJDLC05W VOLTAGE 5 Volts POWER 120 Watts ULTRA LOW CAPACITANCE DUAL TRANSIET VOLTAGE SUPPRESSOR FOR HIGH SPEED DATA LINES This transient overvoltage suppressor is intended to prodect sensitive equipment againset electrostatic discharge events as well to offer a minmum lnsertion loss in data transmis



Pan Jit International
Pan Jit International

PDF



PJSMDA15C  

  
QUAD TVS/ZENER ARRAY

PJSMDA05,05C SERIES QUAD TVS/ZENER ARRAY FOR ESD AND LATCH-UP PROTECTION This Quad TVS/Zener Array family have been designed to Protect Sensitive Equipment against ESD and to prevent Latch-Up events in CMOS circuitry operating at 5V, 12V, 15V and 24V for Unidirectional and Bi-directional protection



Pan Jit International
Pan Jit International

PDF



PJF10N60  

  
600V N-Channel Enhancement Mode MOSFET

PJP10N60 / PJF10N60 600V N-Channel Enhancement Mode MOSFET FEATURES • 10A , 600V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS I



Pan Jit International
Pan Jit International

PDF



PJSR12  

  
Low Capacitance TVS and Diode Array

PJSR12 Low Capacitance TVS and Diode Array This diode array is configured to protect up to two data transmission lines acting as a line terminator, minimizing overshoot and undershoot conditions due to bus impedance as well as protect against over-voltage events as electrostatic discharges. Addition



Pan Jit International
Pan Jit International

PDF



PJA3432  

  
N-Channel Enhancement Mode MOSFET

PPJA3432 30V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 30 V Current 1.6A SOT-23 Features  RDS(ON) , VGS@4,5V, [email protected]<200mΩ  RDS(ON) , [email protected], [email protected]<270mΩ  RDS(ON) , [email protected], [email protected]<570mΩ  Advanced Trench Process Technology  Specially Designed for



Pan Jit International
Pan Jit International

PDF



PJP7N65  

  
650V N-Channel Enhancement Mode MOSFET

PJP7N65 / PJF7N65 650V N-Channel Enhancement Mode MOSFET FEATURES • 7A , 650V, RDS(ON)=1.4Ω@VGS=10V, ID=3.5A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In c



Pan Jit International
Pan Jit International

PDF




  [1] 




사이트 맵

0    1    2    3    4    5    6    7    8    9    A    B    C    

D    E    F    G    H    I    J    K    L    M    N    O

    P    Q    R    S    T    U    V    W    X    Y    Z


PartNumber.co.kr   |  2020    |  연락처