PJ6694
25V N-Channel Enhancement Mode MOSFET
PJ6694
25V N-Channel Enhancement Mode MOSFET
FEATURES
• RDS(ON), VGS@10V,IDS@12A=12mΩ • RDS(ON), [email protected],IDS@10A=22mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC Converters • Fully Ch
Pan Jit International
PDF
PJ6680
25V N-Channel Enhancement Mode MOSFET
PJ6680
25V N-Channel Enhancement Mode MOSFET
FEATURES
• RDS(ON), VGS@10V,IDS@12A=10mΩ • RDS(ON), [email protected],IDS@10A=18mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC Converters • Fully Ch
Pan Jit International
PDF