Datasheet PJ4N3KDW Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	PJ4N3KDW	30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), [email protected],IDS@1mA=7.0Ω • RDS(ON), [email protected],IDS@10mA=5.0Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • The MOSFET elements are independent,eliminating in	Pan Jit International

PJ4N3 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
PJ4N3KDW	30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), [email protected],IDS@1mA=7.0Ω • RDS(ON), [email protected],IDS@10mA=5.0Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • The MOSFET elements are indepe	Pan Jit International

Esta página es del resultado de búsqueda del PJ4N3KDW. Si pulsa el resultado de búsqueda de PJ4N3KDW se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.

Enlace url :

[1]

nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap