PJ4N3KDW
30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected
FEATURES
• RDS(ON),
[email protected],IDS@1mA=7.0Ω • RDS(ON),
[email protected],IDS@10mA=5.0Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • The MOSFET