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PJ4800 30V N-Channel Enhancement Mode MOSFET SOIC-08 FEATURES • RDS(ON), VGS@10V,IDS@8A=20mΩ • RDS(ON), [email protected],IDS@6A=31mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC Converters • Fully Characterized Av
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