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PJ2306 30V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,[email protected]=65mΩ • RDS(ON), [email protected],[email protected]=85mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially
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