PHX23NQ11T
NXP Semiconductors
N-channel TrenchMOS standard level FET
PHX23NQ11T
N-channel TrenchMOS™ standard level FET
Rev. 01 — 14 May 2004 Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a fully isolated encapsulated plastic package using Trenc
PHX23NQ10T
N-channel TrenchMOS transistorPhilips Semiconductors
Product specification
N-channel TrenchMOS™ transistor
PHX23NQ10T
FEATURES
• ’Trench’ technology • Low on-state resistance • Fast switching
SYMBOL
d
QUICK REFERENCE DATA VDSS = 100 V ID = 13 A
g
RDS(ON) ≤ 70 mΩ
s
GENERAL DESCRIPTION
N-channel enhancement
NXP Semiconductors
PDF