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Datasheet PHP21N06 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | PHP21N06 | TrenchMOSO transistor Standard level FET Philips Semiconductors
Product specification
TrenchMOS™ transistor Standard level FET
GENERAL DESCRIPTION
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral |
 NXP Semiconductors |
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| 3 | PHP21N06 | N-channel TrenchMOS transistor Logic level FET Philips Semiconductors
Product specification
TrenchMOS™ transistor Standard level FET
GENERAL DESCRIPTION
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral |
NXP Semiconductors |
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| 2 | PHP21N06LT | N-channel TrenchMOS transistor Logic level FET Philips Semiconductors
Product specification
N-channel TrenchMOS™ transistor Logic level FET
FEATURES
• ’Trench’ technology • Low on-state resistance • Fast switching • Logic level compatible
g
PHP21N06LT, PHB21N06LT PHD21N06LT
QUICK REFERENCE DATA
d
SYMBOL
VDSS = 55 V ID = 19 A R |
NXP Semiconductors |
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| 1 | PHP21N06T | TrenchMOSO transistor Standard level FET Philips Semiconductors
Product specification
TrenchMOS™ transistor Standard level FET
GENERAL DESCRIPTION
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral |
NXP Semiconductors |
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