Datasheet PHN103 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	PHN103	N-channel enhancement mode MOS transistor DISCRETE SEMICONDUCTORS DATA SHEET PHN103 N-channel enhancement mode MOS transistor Product speciﬁcation Supersedes data of 1996 Nov 12 File under Discrete Semiconductors, SC13b 1997 Jun 20 Philips Semiconductors Product speciﬁcation N-channel enhancement mode MOS transistor FEATURES • Hi	NXP Semiconductors

PHN Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
PHN210T	Dual N-channel TrenchMOS intermediate level FET PHN210T Dual N-channel TrenchMOS intermediate level FET Rev. 02 — 15 December 2010 Product data sheet 1. Product profile 1.1 General description Dual intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. Th	NXP Semiconductors
PHN210	Dual N-channel enhancement mode TrenchMOS transistor Philips Semiconductors Product specification Dual N-channel enhancement mode TrenchMOSTM transistor FEATURES • Dual device • Low threshold voltage • Fast switching • Logic level compatible • Surface mount package PHN210 SYMBOL d1 d1 d2 d2 QUICK REFERENCE DATA VDS =	NXP Semiconductors
PHN1013	N-channel enhancement mode MOS transistor DISCRETE SEMICONDUCTORS DATA SHEET PHN1013 N-channel enhancement mode MOS transistor Objective speciﬁcation File under Discrete Semiconductors, SC13b 1997 Jun 20 Philips Semiconductors Objective speciﬁcation N-channel enhancement mode MOS transistor FEATURES • Very low	NXP Semiconductors

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Número de pieza	Descripción	Fabricantes	PDF
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