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Datasheet PHD6N10E Equivalent ( PDF )

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1 PHD6N10E   PowerMOS transistor

Philips Semiconductors Product specification PowerMOS transistor PHD6N10E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high
NXP Semiconductors
NXP Semiconductors
datasheet PHD6N10E pdf

PHD6N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
PHD6N10E

PowerMOS transistor

Philips Semiconductors Product specification PowerMOS transistor PHD6N10E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast
NXP Semiconductors
NXP Semiconductors
datasheet pdf - NXP Semiconductors


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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