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Datasheet PHD2N60 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | PHD2N60 | PowerMOS transistor Philips Semiconductors
Product specification
PowerMOS transistor
PHD2N60
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable off-state characteristics, fast switching a |
NXP Semiconductors |
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1 | PHD2N60E | PowerMOS transistors Avalanche energy rated Philips Semiconductors
Product specification
PowerMOS transistors Avalanche energy rated
FEATURES
• Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance
PHP2N60E, PHB2N60E, PHD2N60E
SYMBOL
d
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NXP Semiconductors |
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