Datasheet PHB60N06T Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	PHB60N06T	TrenchMOS transistor Standard level FET Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-sta	NXP Semiconductors

PHB60N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
PHB60N06T	TrenchMOS transistor Standard level FET Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device feat	NXP Semiconductors
PHB60N06LT	TrenchMOS transistor Logic level FET Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PH	NXP Semiconductors

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Número de pieza	Descripción	Fabricantes	PDF
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