Datasheet PHB2N50E Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	PHB2N50E	PowerMOS transistors Avalanche energy rated Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHP2N50E, PHB2N50E, PHD2N50E SYMBOL d QUICK RE	NXP Semiconductors

PHB2N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
PHB2N60E	PowerMOS transistors Avalanche energy rated Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHP2N60E, PHB2N60E, PHD2N60E	NXP Semiconductors
PHB2N50E	PowerMOS transistors Avalanche energy rated Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHP2N50E, PHB2N50E, PHD2N50E	NXP Semiconductors
PHB2N50	PowerMOS transistor Philips Semiconductors Product specification PowerMOS transistor PHB2N50 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable off-state characteristi	NXP Semiconductors

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Número de pieza	Descripción	Fabricantes	PDF
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