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Datasheet PF01412 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | PF01412 | MOS FET Power Amplifier Module for E-GSM Handy Phone PF01412A
MOS FET Power Amplifier Module for E-GSM Handy Phone
ADE-208-477B (Z) 3rd Edition February 1997 Application
• For GSM class4 890 to 915 MHz • For 5.5V nominal DC/DC converter use
Features
• • • • High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Ma |
 Hitachi Semiconductor |
 |
| 1 | PF01412A | MOS FET Power Amplifier Module for E-GSM Handy Phone PF01412A
MOS FET Power Amplifier Module for E-GSM Handy Phone
ADE-208-477B (Z) 3rd Edition February 1997 Application
• For GSM class4 890 to 915 MHz • For 5.5V nominal DC/DC converter use
Features
• • • • High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Ma |
Hitachi Semiconductor |
|
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