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Datasheet PF01411 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | PF01411 | MOS FET Power Amplifier Module for E-GSM Handy Phone PF01411A
MOS FET Power Amplifier Module for E-GSM Handy Phone
ADE-208-433C (Z) 4th Edition February 1997 Application
• For E-GSM class4 880 to 915 MHz • For 4.8V nominal battery use
Features
• • • • High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2 |
 Hitachi Semiconductor |
 |
| 2 | PF01411A | MOS FET Power Amplifier Module for E-GSM Handy Phone PF01411A
MOS FET Power Amplifier Module for E-GSM Handy Phone
ADE-208-433C (Z) 4th Edition February 1997 Application
• For E-GSM class4 880 to 915 MHz • For 4.8V nominal battery use
Features
• • • • High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2 |
Hitachi Semiconductor |
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| 1 | PF01411B | MOS FET Power Amplifier Module for E-GSM Handy Phone PF01411B
MOS FET Power Amplifier Module for E-GSM Handy Phone
ADE-208-434B (Z) 3rd Edition Nov. 1997 Application
• For E-GSM class4 880 to 915 MHz • For 3.5 V nominal battery use
Features
• • • • High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2cc |
Hitachi Semiconductor |
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