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Datasheet PE642DT Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | PE642DT | Dual N-Channel Enhancement Mode MOSFET PE642DT
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS Q2 30V
RDS(ON) 9mΩ @VGS = 10V
Q1 30V 10.5mΩ @VGS = 10V
ID 34A 31A
PDFN 3X3S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Q2
Q1
Drain-Source Voltage
VDS 30 30
Gat |  UNIKC | mosfet |
PE6 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | PE60 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | PE600BA | N-Channel Enhancement Mode MOSFET PE600BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 9.8mΩ @VGS = 10V
ID 32A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous UNIKC mosfet | | |
| 3 | PE600SA | N-Channel Enhancement Mode MOSFET PE600SA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 12mΩ @VGS = 10V
ID 25A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
TC = 25 °C
UNIKC mosfet | | |
| 4 | PE601CA | P&N-Channel Enhancement Mode MOSFET PE601CA
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS 30V -30V
RDS(ON) 22mΩ @VGS = 10V 28mΩ @VGS = -10V
ID 20A -19A
Channel N P
100% UIS Tested PDFN 3X3P 100% Rg Tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL CH. LIMIT UNIKC mosfet | | |
| 5 | PE606BA | N-Channel Enhancement Mode MOSFET PE606BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 20mΩ @VGS = 10V
ID3 22A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Tc = 25 °C UNIKC mosfet | | |
| 6 | PE606DT | Dual N-Channel Enhancement Mode MOSFET PE606DT
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS Q2 30V
RDS(ON) 11mΩ @VGS = 10V
Q1 30V
16mΩ @VGS = 10V
ID 30A 23A
PDFN 3X3S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Q2
Drain-Source Voltage
VDS 30
Gate-Sourc UNIKC mosfet | | |
| 7 | PE608N | Diode, Rectifier American Microsemiconductor diode | |
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