PE606DT
UNIKC
Dual N-Channel Enhancement Mode MOSFETPE606DT
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS Q2 30V
RDS(ON) 11mΩ @VGS = 10V
Q1 30V
16mΩ @VGS = 10V
ID 30A 23A
PDFN 3X3S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Q2
PE606BA
N-Channel Enhancement Mode MOSFETPE606BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 20mΩ @VGS = 10V
ID3 22A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Tc = 25 °C
UNIKC
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