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Datasheet PD84002 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | PD84002 | RF power transistor The LdmoST plastic family
PD84002
RF power transistor The LdmoST plastic family
Features
■ ■ ■ ■ ■ ■ ■
Excellent thermal stability Common source configuration Broadband performances POUT = 2 W with 13 dB gain @ 870 MHz Plastic package ESD protection Supplied in tape and reel In compliance |  STMicroelectronics | transistor |
PD8 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | PD80 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | PD800A | AC-DC Front end power module Lambda data | | |
| 3 | PD800A-230-28 | AC-DC Front end power module Lambda data | | |
| 4 | PD800A-230-48 | AC-DC Front end power module Lambda data | | |
| 5 | PD8042 | InGaAs AVALANCHE PHOTO DIODES MITSUBISHI LASER DIODES
PD8XX2 SERIES
InGaAs AVALANCHE PHOTO DIODES
TYPE NAME
PD8042,PD8932
FEATURES
• Active diameter 50µm • Low • High • Very • High
noise speed response small dark current quantum efficiency
DISCRIPTION
PD8XX2 is an InGaAs avalanche photodiode suitable for receiving  Mitsubishi Electric Semiconductor diode | | |
| 6 | PD839C4 | InGaAs AVALANCHE PHOTO DIODES
MITSUBISHI PHOTO DIODES
PD839C4
InGaAs AVALANCHE PHOTO DIODES
PD839C4
DESCRIPTION PD839C4 is a φ35µm InGaAs Avalanche Photodiodes (APD) with Trans Impedance Amplifier(TIA). This APD with TIA features a high-speed response and low noise, and is suitable for 2.5Gb/s optical co  Mitsubishi Electric diode | | |
| 7 | PD84002 | RF power transistor The LdmoST plastic family
PD84002
RF power transistor The LdmoST plastic family
Features
■ ■ ■ ■ ■ ■ ■
Excellent thermal stability Common source configuration Broadband performances POUT = 2 W with 13 dB gain @ 870 MHz Plastic package ESD protection Supplied in tape and reel In compliance STMicroelectronics transistor | |
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