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Datasheet PD55008S Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | PD55008S | RF POWER TRANSISTORS The LdmoST Plastic FAMILY PD55008 - PD55008S
RF POWER TRANSISTORS The LdmoST Plastic FAMILY
PRELIMINARY DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 8 W with 17 dB gain @ 500 MHz / 12.5V • NEW RF PLASTIC PACKAGE
DESCRIPTION The PD55008 is a com | STMicroelectronics | transistor |
2 | PD55008S-E | RF POWER transistor / LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs PD55008-E PD55008S-E
RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
General features
■ ■ ■ ■
Excellent thermal stability Common source configuration POUT = 8W with 17dB gain @ 500MHz / 12.5V New RF plastic package
PowerSO-10RF (formed lead)
Descriptio | STMicroelectronics | mosfet |
PD5 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | PD5036 | Telephone Ring Generator Controller Telephone Ring Generator Controller
PD5036
US Patent No. 5,828,558 Patent Pending in Europe, and Asia
http://www.Datasheet4U.com
PD5036 TELEPHONE RING GENERATOR CONTROLLER
FEATURES
♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Integrated Overload and Short Circuit Protection Programmable Large Swing O PowerDsine controller | | |
2 | PD504BA | N-Channel Enhancement Mode MOSFET PD504BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
110V
85mΩ @VGS = 10V
ID 15A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 110
Gate-Source Voltage
VGS ±20
Continuous D UNIKC mosfet | | |
3 | PD506BA | N-Channel Enhancement Mode MOSFET PD506BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 6mΩ @VGS = 10V
ID 70A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain UNIKC mosfet | | |
4 | PD50F2 | FRD Nihon Inter Electronics data | | |
5 | PD50F4 | FRD Nihon Inter Electronics data | | |
6 | PD50F5 | FRD MODULE FRD MODULE 50A/500V/trr:90nsec
FEATURES
* Isolated Base * Dual Diode Doubler Circuit * Ultra Fast Recovery * High Surge Capability * UL Recognized, File No. E187184
TYPICAL APPLICATIONS
* High Frequency Rectification
PD50F5
OUTLINE DRAWING
Maximum Ratings
Approx Net Weight:105g
Voltage Rating
Re ETC data | | |
7 | PD50F6 | FRD MODULE FRD MODULE 50A/600V/trr:100nsec
FEATURES
* Isolated Base * Dual Diode Doubler Circuit * Ultra Fast Recovery * High Surge Capability * UL Recognized, File No. E187184
TYPICAL APPLICATIONS
* High Frequency Rectification
PD50F6
OUTLINE DRAWING
Maximum Ratings
Approx Net Weight:105g
Voltage Rating
R ETC data | |
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Número de pieza | Descripción | Fabricantes | |
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