|
PBSS8110Y 100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 01 — 2 June 2004 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat transistor in a SOT363 (SC-88) plastic package. 1.2 Features s s s s SOT363 package Low collector-emitter saturation volt
PBSS8110X 100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 02 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package. PNP complement: PBSS9110X. 1.2 Features
PBSS8110Z 100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 01 — 26 April 2004 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat transistor in a plastic SOT223 (SC-73) package. 1.2 Features s s s s SOT223 package Low collector-emitter saturation vo
PBSS8110D 100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 01 — 23 April 2004 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat transistor in a plastic SOT457 (SC-74) package. 1.2 Features s s s s SOT457 package Low collector-emitter saturation vo
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS8110T 100 V, 1 A NPN low VCEsat (BISS) transistor Product specification Supersedes data of 2003 Jul 28 2003 Dec 22 Philips Semiconductors Product specification 100 V, 1 A NPN low VCEsat (BISS) transistor FEATUR
|
사이트 맵 |
0 1 2 3 4 5 6 7 8 9 A B C |
PartNumber.co.kr | 2020 | 연락처 |