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SOT457 PBSS5350D 50 V, 3 A PNP low VCEsat (BISS) transistor Rev. 6 — 28 June 2011 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement:
PBSS5350SS 50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor Rev. 01 — 3 April 2007 Product data sheet 1. Product profile 1.1 General description PNP/PNP double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package. Table 1. Produ
SOT457 PBSS5350D 50 V, 3 A PNP low VCEsat (BISS) transistor Rev. 6 — 28 June 2011 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement:
DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D186 PBSS5350S 50 V low VCEsat PNP transistor Product specification 2001 Nov 19 Philips Semiconductors Product specification 50 V low VCEsat PNP transistor FEATURES • High power dissipation (830 mW) • Ultra low collector-emitter saturation vol
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PBSS5350Z 50 V low VCEsat PNP transistor Product data sheet Supersedes data of 2003 Jan 20 2003 May 13 NXP Semiconductors 50 V low VCEsat PNP transistor Product data sheet PBSS5350Z FEATURES • Low collector-emitter saturation volta
DISCRETE SEMICONDUCTORS DATA SHEET PBSS5350T 50 V, 3 A PNP low VCEsat (BISS) transistor Product specification Supersedes data of 2002 Aug 08 2004 Jan 13 Philips Semiconductors Product specification 50 V, 3 A PNP low VCEsat (BISS) transistor FEATURES • Low collector-emitter saturation voltag
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