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Datasheet PB64G Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | PB64G | Diode, Rectifier |  American Microsemiconductor | diode |
PB6 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | PB60 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | PB600BA | N-Channel Enhancement Mode MOSFET PB600BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 12mΩ @VGS = 10V
ID 9A
PDFN 2X2S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Dr  UNIKC mosfet | | |
| 3 | PB605 | Diode, Rectifier American Microsemiconductor diode | | |
| 4 | PB605 | 6 Amp Glass Passivated Rectifier 50 to 1000 Volts MCC
Features
• • • • •
omponents 21201 Itasca Street Chatsworth !"# $
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PB605 THRU PB610
6 Amp Glass Passivated Rectifier 50 to 1000 Volts
PB-6
B
Glass Passivated chip Low Forward Voltage Any Mounting Position Silver Plat  Micro Commercial Components rectifier | | |
| 5 | PB605G | Diode, Rectifier American Microsemiconductor diode | | |
| 6 | PB606BA | N-Channel Enhancement Mode MOSFET PB606BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 16mΩ @VGS = 10V
ID 7.8A
PDFN 2X2S
100%RG TEST 100%UIL TEST
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Volt UNIKC mosfet | | |
| 7 | PB61 | Diode, Rectifier American Microsemiconductor diode | |
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