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P9006EDG 전자부품 데이터시트



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P9006EDG  

UNIKC
UNIKC

P9006EDG

P-Channel Enhancement Mode MOSFET

P9006EDG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -60V 90mΩ @VGS = -10V ID -15A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -60



P9006EDG  

Niko-Sem
Niko-Sem

P9006EDG

P-Channel Logic Level Enhancement

NIKO-SEM P-Channel Logic Level Enhancement Mode Field Effect Transistor (Preliminary) P9006EDG TO-252 Lead-Free D PRODUCT SUMMARY V(BR)DSS -60V RDS(ON) 90m ID -8A G S 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted



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