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Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 700V Low RDS(ON) : 1.552 Ω (Typ.) 1 2 3 SSP6N70A BVDSS = 700 V RDS(on) = 1.8 Ω ID = 6 A
STP6NK50Z - STF6NK50Z STD6NK50Z N-CHANNEL 500V - 0.93Ω - 5.6A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH™ MOSFET TYPE VDSS RDS(on) ID Pw STP6NK50Z STF6NK50Z STD6NK50Z 500 V 500 V 500 V < 1.2 Ω < 1.2 Ω < 1.2 Ω 5.6 A 5.6 A 5.6 A 90 W 25 W 90 W s TYPICAL RDS(on) = 0.93 Ω s EXT
QFET $ $ $ $ $ $ % &'())*+,- .Ω/*,-)* 0 1 2) 3 01 -.3 -))4 ! 5 !!6 "
STP6NK60Z - STP6NK60ZFP STB6NK60Z - STB6NK60Z-1 N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH™Power MOSFET TYPE VDSS 600 600 600 600 V V V V RDS(on) < 1.2 < 1.2 < 1.2 < 1.2 Ω Ω Ω Ω ID 6 6 6 6 A A A A Pw 110 W 32 W
STP6NA60FP N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP6NA60F P s s s s s s s V DSS 600 V R DS(on) < 1.2 Ω ID 3.9 A TYPICAL RDS(on) = 1 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW
STP6NB50 STP6NB50FP N - CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET TYPE STP6NB50 STP6NB50FP s s s s s V DSS 500 V 500 V R DS(on) < 1.5 Ω < 1.5 Ω ID 5.8 A 3.4 A TYPICAL RDS(on) = 1.35 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITAN
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