P6N70
Fairchild Semiconductor
FQP6N70
QFET
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P6N70A
Fairchild Semiconductor
SSP6N70AAdvanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 700V Low RDS(ON) : 1.552 Ω (Typ.)
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SSP6N70A