P5N50C
Thinki Semiconductor
5 Ampere 500 Volt N-Channel MOSFETP5N50C
®
Pb Free Plating Product
P5N50C
5 Ampere 500 Volt N-Channel MOSFET
{
̻
Pb
Features
̰ ̰ ̰ ̰ ̰
RDS(on) (Max 1.5 ˟ )@VGS=10V Gate Charge (Typical 18.5nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested
ඔ
2. Drain
BVDSS =
P5N50
IXTP5N50P
Advance Technical Information
PolarHVTM Power MOSFET
N-Channel Enhancement Mode
IXTA 5N50P IXTP 5N50P IXTY 5N50P
VDSS = 500 V = 4.8 A ID25 RDS(on) ≤ 1.4 Ω
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL
Test Conditions TJ = 25°C to 150°C TJ = 25
IXYS Corporation
PDF