Datasheet P4C163 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	P4C163	ULTRA HIGH SPEED 8K x 9 STATIC CMOS RAMS P4C163/P4C163L ULTRA HIGH SPEED 8K x 9 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 25/35ns (Commercial) – 25/35/45ns (Military) Low Power Operation (Commercial/Military) Output Enable and Dual Chip Enable Control Functions Single	Pyramid Semiconductor Corporation	cmos
2	P4C163L	ULTRA HIGH SPEED 8K x 9 STATIC CMOS RAMS P4C163/P4C163L ULTRA HIGH SPEED 8K x 9 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 25/35ns (Commercial) – 25/35/45ns (Military) Low Power Operation (Commercial/Military) Output Enable and Dual Chip Enable Control Functions Single	Pyramid Semiconductor Corporation	cmos

P4C Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	P4C1023	LOW POWER 128K x 8 SINGLE CHIP ENABLE CMOS STATIC RAM P4C1023/P4C1023L LOW POWER 128K x 8 SINGLE CHIP ENABLE CMOS STATIC RAM FEATURES VCC Current — Operating: 35mA — CMOS Standby: 100µA Access Times —55/70 ns Single 5 Volts ±10% Power Supply Easy Memory Expansion Using CE and OE Inputs Common Data I/O Three-State Outputs Ful	Pyramid Semiconductor	cmos
2	P4C1023L	LOW POWER 128K x 8 SINGLE CHIP ENABLE CMOS STATIC RAM P4C1023/P4C1023L LOW POWER 128K x 8 SINGLE CHIP ENABLE CMOS STATIC RAM FEATURES VCC Current — Operating: 35mA — CMOS Standby: 100µA Access Times —55/70 ns Single 5 Volts ±10% Power Supply Easy Memory Expansion Using CE and OE Inputs Common Data I/O Three-State Outputs Ful	Pyramid Semiconductor	cmos
3	P4C1024	HIGH SPEED 128K X 8 CMOS STATIC RAM P4C1024 P4C1024 HIGH SPEED 128K x 8 CMOS STATIC RAM FEATURES High Speed (Equal Access and Cycle Times) — 15/17/20/25/35 ns (Commercial) — 20/25/35/45 ns (Industrial) Single 5 Volts ±10% Power Supply Easy Memory Expansion Using CE1, CE2 and OE Inputs Common Data I/O Three-State Outputs Fully TT	ETC	cmos
4	P4C1024-15J3C	HIGH SPEED 128K X 8 CMOS STATIC RAM P4C1024 P4C1024 HIGH SPEED 128K x 8 CMOS STATIC RAM FEATURES High Speed (Equal Access and Cycle Times) — 15/17/20/25/35 ns (Commercial) — 20/25/35/45 ns (Industrial) Single 5 Volts ±10% Power Supply Easy Memory Expansion Using CE1, CE2 and OE Inputs Common Data I/O Three-State Outputs Fully TT	ETC	cmos
5	P4C1024-15J3I	HIGH SPEED 128K X 8 CMOS STATIC RAM P4C1024 P4C1024 HIGH SPEED 128K x 8 CMOS STATIC RAM FEATURES High Speed (Equal Access and Cycle Times) — 15/17/20/25/35 ns (Commercial) — 20/25/35/45 ns (Industrial) Single 5 Volts ±10% Power Supply Easy Memory Expansion Using CE1, CE2 and OE Inputs Common Data I/O Three-State Outputs Fully TT	ETC	cmos
6	P4C1024-15J4C	HIGH SPEED 128K X 8 CMOS STATIC RAM P4C1024 P4C1024 HIGH SPEED 128K x 8 CMOS STATIC RAM FEATURES High Speed (Equal Access and Cycle Times) — 15/17/20/25/35 ns (Commercial) — 20/25/35/45 ns (Industrial) Single 5 Volts ±10% Power Supply Easy Memory Expansion Using CE1, CE2 and OE Inputs Common Data I/O Three-State Outputs Fully TT	ETC	cmos
7	P4C1024-15J4I	HIGH SPEED 128K X 8 CMOS STATIC RAM P4C1024 P4C1024 HIGH SPEED 128K x 8 CMOS STATIC RAM FEATURES High Speed (Equal Access and Cycle Times) — 15/17/20/25/35 ns (Commercial) — 20/25/35/45 ns (Industrial) Single 5 Volts ±10% Power Supply Easy Memory Expansion Using CE1, CE2 and OE Inputs Common Data I/O Three-State Outputs Fully TT	ETC	cmos

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Número de pieza	Descripción	Fabricantes	PDF
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