P45N02
Intersil Corporation
45A / 20V / 0.022 Ohm / N-Channel Logic Level Power MOSFETsRFP45N02L, RF1S45N02L, RF1S45N02LSM
May 1997
45A, 20V, 0.022 Ohm, N-Channel Logic Level Power MOSFETs
Description
The RFP45N02L, RF1S45N02L, and RF1S45N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature
P45N02LD
Niko-Sem
N-Channel Logic Level Enhancement Mode Field Effect TransistorNIKO-SEM
N-Channel Logic Level Enhancement Mode Field Effect Transistor
P45N02LD
TO-252 (DPAK)
D
PRODUCT SUMMARY V(BR)DSS 25 RDS(ON) 20mΩ ID 45A 1. GATE 2. DRAIN 3. SOURCE
G S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST
P45N02LDG
UNIKC
N-Channel Enhancement Mode MOSFETP45N02LDG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
25V 20mΩ @VGS = 10V
ID 32A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 25
Gate
P45N02LDG
Niko-Sem
N-Channel Logic Level Enhancement Mode Field Effect TransistorNIKO-SEM
N-Channel Logic Level Enhancement Mode Field Effect Transistor
P45N02LDG
TO-252 (DPAK) Lead-Free
D
PRODUCT SUMMARY V(BR)DSS 25 RDS(ON) 20m£[ ID 45A 1. GATE 2. DRAIN 3. SOURCE
G S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARA
P45N02LI
UNIKC
N-Channel Enhancement Mode MOSFETP45N02LI
N-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
25V 20mΩ @VGS = 10V
ID 26A
TO-251
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VG