P4404EI
UNIKC
P-Channel Enhancement Mode MOSFETP4404EI
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
44mΩ @VGS = -10V
ID -24A
TO-251
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
P4404QVT
N & P-Channel Enhancement Mode MOSFETP4404QVT
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS 40V
RDS(ON) 30mΩ @VGS =10V
-40V
45mΩ @VGS = -10V
ID Channel 7A N -5A P
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
N 40 VDS P
UNIKC
PDF
P4404QV
N & P-Channel Enhancement Mode MOSFETP4404QV
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS 40V
RDS(ON) 28mΩ @VGS =10V
-40V
44mΩ @VGS = -10V
ID Channel 7A N -5A P
SOP-8
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
N 40 VDS P
UNIKC
PDF
P4404EDG
P-Channel Enhancement Mode MOSFETP4404EDG
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
44mΩ @VGS = -10V
ID -20A
TO-252
100% UIS tested
100% Rg tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNITS
Drain-Source Voltage Gate-Sourc
UNIKC
PDF