P400
International Rectifier
PASSIVATED ASSEMBLED CIRCUIT ELEMENTSBulletin I2776 rev. E 04/99
P400 SERIES
PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Features
Glass passivated junctions for greater reliability Electrically isolated base plate Available up to 1200 V RRM , V DRM High dynamic characteristics Wide choice of circuit c
P4004ED
UNIKC
P-Channel Enhancement Mode MOSFETP4004ED
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
40mΩ @VGS = -10V
ID -21A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
P4004ED
NIKO-SEM
P-Channel Logic Level Enhancement Mode Field Effect TransistorNIKO-SEM
P-Channel Logic Level Enhancement Mode Field Effect Transistor
D
P4004ED
TO-252(DPAK) Halogen-Free & Lead-Free
PRODUCT SUMMARY V(BR)DSS -40V RDS(ON) 40mΩ ID -21A
G S
1. GATE 2. DRAIN 3. SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Other
P4006BV
UNIKC
N-Channel Enhancement Mode MOSFETP4006BV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 40mΩ @VGS = 10V
ID 4.3A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-S
P4006DV
UNIKC
P-Channel Enhancement Mode MOSFETP4006DV
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-60V
40mΩ @VGS = -10V
ID -5.9A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -60