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P2812A 전자부품 데이터시트



P2812A 전자부품 회로 및
기능 검색 결과



P2812A  

ON Semiconductor
ON Semiconductor

P2812A

Low Power EMI Reduction IC

P2811A/B and P2812A/B and P2814A/B Low Power EMI Reduction IC Features • FCC approved method of EMI attenuation • Provides up to 15dB EMI reduction • Generates a 1x, 2x and 4x low EMI spread spectrum clock of the input frequency o 1x: P2811A/B o 2x: P28




관련 부품 P281 상세설명

P2811B  

  
Low Power EMI Reduction IC

P2811A/B and P2812A/B and P2814A/B Low Power EMI Reduction IC Features • FCC approved method of EMI attenuation • Provides up to 15dB EMI reduction • Generates a 1x, 2x and 4x low EMI spread spectrum clock of the input frequency o 1x: P2811A/B o 2x: P2812A/B o 4x: P2814A/B • Optimized for i



ON Semiconductor
ON Semiconductor

PDF



P2814A  

  
Low Power EMI Reduction IC

P2811A/B and P2812A/B and P2814A/B Low Power EMI Reduction IC Features • FCC approved method of EMI attenuation • Provides up to 15dB EMI reduction • Generates a 1x, 2x and 4x low EMI spread spectrum clock of the input frequency o 1x: P2811A/B o 2x: P2812A/B o 4x: P2814A/B • Optimized for i



ON Semiconductor
ON Semiconductor

PDF



P2811A  

  
Low Power EMI Reduction IC

P2811A/B and P2812A/B and P2814A/B Low Power EMI Reduction IC Features • FCC approved method of EMI attenuation • Provides up to 15dB EMI reduction • Generates a 1x, 2x and 4x low EMI spread spectrum clock of the input frequency o 1x: P2811A/B o 2x: P2812A/B o 4x: P2814A/B • Optimized for i



ON Semiconductor
ON Semiconductor

PDF



P2814B  

  
Low Power EMI Reduction IC

P2811A/B and P2812A/B and P2814A/B Low Power EMI Reduction IC Features • FCC approved method of EMI attenuation • Provides up to 15dB EMI reduction • Generates a 1x, 2x and 4x low EMI spread spectrum clock of the input frequency o 1x: P2811A/B o 2x: P2812A/B o 4x: P2814A/B • Optimized for i



ON Semiconductor
ON Semiconductor

PDF



P2812B  

  
Low Power EMI Reduction IC

P2811A/B and P2812A/B and P2814A/B Low Power EMI Reduction IC Features • FCC approved method of EMI attenuation • Provides up to 15dB EMI reduction • Generates a 1x, 2x and 4x low EMI spread spectrum clock of the input frequency o 1x: P2811A/B o 2x: P2812A/B o 4x: P2814A/B • Optimized for i



ON Semiconductor
ON Semiconductor

PDF



P281  

  
PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly



Polyfet RF Devices
Polyfet RF Devices

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