Datasheet P12NM50 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	P12NM50	STP12NM50 www.DataSheet4U.net STP12NM50 - STP12NM50FP STB12NM50 - STB12NM50-1 N-channel 550V @ tjmax - 0.30Ω - 12A TO-220/FP/D2/I2PAK MDmesh™ Power MOSFET General features Type STB12NM50 STB12NM50-1 STP12NM50 STP12NM50FP ■ ■ ■ ■ ■ VDSS (@Tjmax) 550V 550V 550V 550V RDS(on) <0.35Ω <0.35Ω <0	STMicroelectronics

P12N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
P12NM50	STP12NM50 www.DataSheet4U.net STP12NM50 - STP12NM50FP STB12NM50 - STB12NM50-1 N-channel 550V @ tjmax - 0.30Ω - 12A TO-220/FP/D2/I2PAK MDmesh™ Power MOSFET General features Type STB12NM50 STB12NM50-1 STP12NM50 STP12NM50FP ■ ■ ■ ■ ■ VDSS (@Tjmax) 550V 550V 550V 550V RDS(on)	STMicroelectronics
P12NB30	STP12NB30 Datasheet.es STP12NB30 STP12NB30FP N - CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET PRELIMINARY DATA TYPE STP3NB60 STP12NB30F P s s s s s V DSS 300 V 300 V R DS(on) < 0.40 Ω < 0.40 Ω ID 12A 6.5 A TYPICAL RDS(on) = 0.34 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVAL	ST Microelectronics
P12N60	HGTP12N60 HGTP12N60D1 April 1995 12A, 600V N-Channel IGBT Package JEDEC TO-220AB EMITTER COLLECTOR GATE COLLECTOR (FLANGE) Features • 12A, 600V • Latch Free Operation • Typical Fall Time <500ns • High Input Impedance • Low Conduction Loss Description The IG	ETC

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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