Datasheet P12N50 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	P12N50	FDP12N50 FDP12N50 / FDPF12N50T N-Channel MOSFET May 2012 FDP12N50 / FDPF12N50T N-Channel MOSFET 500V, 11.5A, 0.65Ω Features • RDS(on) = 0.55Ω (Typ.)@ VGS = 10V, ID = 6A • Low gate charge ( Typ. 22nC) • Low Crss ( Typ. 11pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability	Fairchild Semiconductor

P12 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
P1203BV	N-Channel Enhancement Mode MOSFET P1203BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V RDS(ON) 12mΩ @VGS = 10V ID 11A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current2 Pulsed Dra	UNIKC
P12NM50	STP12NM50 www.DataSheet4U.net STP12NM50 - STP12NM50FP STB12NM50 - STB12NM50-1 N-channel 550V @ tjmax - 0.30Ω - 12A TO-220/FP/D2/I2PAK MDmesh™ Power MOSFET General features Type STB12NM50 STB12NM50-1 STP12NM50 STP12NM50FP ■ ■ ■ ■ ■ VDSS (@Tjmax) 550V 550V 550V 550V RDS(on)	STMicroelectronics
P1260ATF	N-Channel Enhancement Mode MOSFET P1260ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 0.65Ω @VGS = 10V ID 12A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage	UNIKC

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nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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