Datasheet P1120EDB Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	P1120EDB	N-Channel Enhancement Mode MOSFET P1120EDB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 200V 280mΩ @VGS = 10V ID 11A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 200 Gate-Source Voltage VGS ±20 Continuous	UNIKC

P1120 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
P1120ETFB	N-Channel Field Effect Transistor NIKO-SEM N-Channel Enhancement Mode P1120ETFB Field Effect Transistor TO-220F Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 200V 280mΩ ID 11A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-	NIKO-SEM
P1120ETFB	N-Channel Enhancement Mode MOSFET P1120ETFB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 200V 280mΩ @VGS = 10V ID 11A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 200 Gate-Source Voltage	UNIKC
P1120EDB	N-Channel Enhancement Mode MOSFET P1120EDB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 200V 280mΩ @VGS = 10V ID 11A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 200 Gate-Source Voltage	UNIKC

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nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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