Datasheet P1060ATFS Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	P1060ATFS	N-Channel Enhancement Mode MOSFET P1060ATF(S) N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 0.75Ω @VGS = 10V ID 10A 100% UIS tested TO-220F(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltag	UNIKC

P1060A Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
P1060ATF	N-Channel Enhancement Mode MOSFET P1060ATF(S) N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 0.75Ω @VGS = 10V ID 10A 100% UIS tested TO-220F(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600	UNIKC
P1060AT	N-Channel Enhancement Mode MOSFET P1060AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 0.75Ω @VGS = 10V ID 10A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage V	UNIKC
P1060ATFS	N-Channel Enhancement Mode MOSFET P1060ATF(S) N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 0.75Ω @VGS = 10V ID 10A 100% UIS tested TO-220F(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600	UNIKC

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Número de pieza	Descripción	Fabricantes	PDF
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