P0860ETF
UNIKC
N-Channel Enhancement Mode MOSFETP0860ETF / P0860ETFS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
1.05Ω @VGS = 10V
ID 8A
TO-220F TO-220FS
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Sourc
P0860ETF
NIKO-SEM
N-Channel Field Effect TransistorNIKO-SEM
N-Channel Enhancement Mode
P0860ETF:TO-220F P0860ETFS:TO-220FS
Field Effect Transistor
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
1.05Ω
ID 8A
D
G S
ABSOLUTE MAXIMUN RATINGS(TA=25 °C Unless Otherwise Noted)
PARAMETERS
P0860ETFS
UNIKC
N-Channel Enhancement Mode MOSFETP0860ETF / P0860ETFS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
1.05Ω @VGS = 10V
ID 8A
TO-220F TO-220FS
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Sourc
P0860ETFS
NIKO-SEM
N-Channel Field Effect TransistorNIKO-SEM
N-Channel Enhancement Mode
P0860ETF:TO-220F P0860ETFS:TO-220FS
Field Effect Transistor
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
1.05Ω
ID 8A
D
G S
ABSOLUTE MAXIMUN RATINGS(TA=25 °C Unless Otherwise Noted)
PARAMETERS