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P0465CTF/P0465CTFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 650V 2.7Ω @VGS = 10V ID 4A TO-220F TO-220FS 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 650 Gate-S
NIKO-SEM N-Channel Enhancement Mode P0465CTF:TO-220F Field Effect Transistor P0465CTFS:TO-220FS Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 650V 2.7Ω ID 4A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Sourc
P0465CT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 650V 2.6mΩ @VGS = 10V ID 4A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ±30 Continuous D
NIKO-SEM N-Channel Enhancement Mode P0465CTF:TO-220F Field Effect Transistor P0465CTFS:TO-220FS Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 650V 2.7Ω ID 4A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Sourc
P0465CS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 650V 2.6mΩ @VGS = 10V ID 4A TO-263 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ±30 Continuous D
NIKO-SEM N-Channel Enhancement Mode P0465CD Field Effect Transistor TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 650V 2.6Ω ID 4A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Sourc
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