NX5313
CEL
LASER DIODEPRELIMINARY DATA SHEET
NEC’s 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NX5313 SERIES FOR FTTH PON APPLICATIONS
FEATURES
• OPTICAL OUTPUT POWER: Po = 13.0 mW • LOW THRESHOLD CURRENT : Ith = 6 mA • DIFFERENTIAL EFFICIENCY: ηd =0.5 W/A • WIDE
NX5313
Renesas
LASER DIODEPRELIMINARY DATA SHEET
LASER DIODE
NX5313 Series
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
DESCRIPTION
The NX5313 Series is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devi
NX5313EH
Renesas
LASER DIODEPRELIMINARY DATA SHEET
LASER DIODE
NX5313 Series
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
DESCRIPTION
The NX5313 Series is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devi
NX5313EK
Renesas
LASER DIODEPRELIMINARY DATA SHEET
LASER DIODE
NX5313 Series
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
DESCRIPTION
The NX5313 Series is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devi