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Datasheet NVMFS4C05N Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | NVMFS4C05N | Power MOSFET ( Transistor ) NVMFS4C05N
Power MOSFET
30 V, 116 A, Single N−Channel, SO−8 FL
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVMFS4C05NWF − Wettable Flanks Option for Enhanced Optical
Inspection
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 ON Semiconductor |
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| 4 | NVMFS4C05NT1G | Power MOSFET ( Transistor ) NVMFS4C05N
Power MOSFET
30 V, 116 A, Single N−Channel, SO−8 FL
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVMFS4C05NWF − Wettable Flanks Option for Enhanced Optical
Inspection
|
ON Semiconductor |
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| 3 | NVMFS4C05NT3G | Power MOSFET ( Transistor ) NVMFS4C05N
Power MOSFET
30 V, 116 A, Single N−Channel, SO−8 FL
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVMFS4C05NWF − Wettable Flanks Option for Enhanced Optical
Inspection
|
ON Semiconductor |
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| 2 | NVMFS4C05NWFT1G | Power MOSFET ( Transistor ) NVMFS4C05N
Power MOSFET
30 V, 116 A, Single N−Channel, SO−8 FL
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVMFS4C05NWF − Wettable Flanks Option for Enhanced Optical
Inspection
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ON Semiconductor |
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