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Datasheet NVMFS4C03N Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
5 | NVMFS4C03N | Power MOSFET ( Transistor ) NVMFS4C03N
Power MOSFET
30 V, 2.1 mW, 143 A, Single N−Channel Logic Level, SO−8FL
Features
• Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS4C03NWF − Wettable Flanks Option for Enhanced |
ON Semiconductor |
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4 | NVMFS4C03NT1G | Power MOSFET ( Transistor ) NVMFS4C03N
Power MOSFET
30 V, 2.1 mW, 143 A, Single N−Channel Logic Level, SO−8FL
Features
• Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS4C03NWF − Wettable Flanks Option for Enhanced |
ON Semiconductor |
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3 | NVMFS4C03NT3G | Power MOSFET ( Transistor ) NVMFS4C03N
Power MOSFET
30 V, 2.1 mW, 143 A, Single N−Channel Logic Level, SO−8FL
Features
• Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS4C03NWF − Wettable Flanks Option for Enhanced |
ON Semiconductor |
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2 | NVMFS4C03NWFT1G | Power MOSFET ( Transistor ) NVMFS4C03N
Power MOSFET
30 V, 2.1 mW, 143 A, Single N−Channel Logic Level, SO−8FL
Features
• Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS4C03NWF − Wettable Flanks Option for Enhanced |
ON Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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