NVMFS4C01N
ON Semiconductor
Power MOSFET ( Transistor )NVMFS4C01N
Power MOSFET
30 V, 0.9 mW, 319 A, Single N−Channel, Logic Level, SO−8FL
Features
• Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS4C01NWF
NVMFS4C01NT1G
ON Semiconductor
Power MOSFET ( Transistor )NVMFS4C01N
Power MOSFET
30 V, 0.9 mW, 319 A, Single N−Channel, Logic Level, SO−8FL
Features
• Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS4C01NWF
NVMFS4C01NT3G
ON Semiconductor
Power MOSFET ( Transistor )NVMFS4C01N
Power MOSFET
30 V, 0.9 mW, 319 A, Single N−Channel, Logic Level, SO−8FL
Features
• Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS4C01NWF
NVMFS4C01NWFT1G
ON Semiconductor
Power MOSFET ( Transistor )NVMFS4C01N
Power MOSFET
30 V, 0.9 mW, 319 A, Single N−Channel, Logic Level, SO−8FL
Features
• Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS4C01NWF
NVMFS4C01NWFT3G
ON Semiconductor
Power MOSFET ( Transistor )NVMFS4C01N
Power MOSFET
30 V, 0.9 mW, 319 A, Single N−Channel, Logic Level, SO−8FL
Features
• Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS4C01NWF