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Datasheet NVMFD5853N Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | NVMFD5853N | Power MOSFET ( Transistor ) NVMFD5853N, NVMFD5853NWF
Power MOSFET
40 V, 10 mW, 53 A, Dual N−Channel, Dual SO−8FL
Features
• Small Footprint (5x6 mm) for Compact Designs • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVMFD5853NWF − Wettable Flanks Product • AEC−Q101 |
 ON Semiconductor |
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| 3 | NVMFD5853NL | Power MOSFET ( Transistor ) NVMFD5853NL, NVMFD5853NLWF Power MOSFET
Features
40 V, 10 mW, 34 A, Dual N−Channel Logic Level, Dual SO−8FL
• • • • • •
Small Footprint (5x6 mm) for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVMFD5853NLWF − Wettable Flanks |
ON Semiconductor |
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| 2 | NVMFD5853NLWF | Power MOSFET ( Transistor ) NVMFD5853NL, NVMFD5853NLWF Power MOSFET
Features
40 V, 10 mW, 34 A, Dual N−Channel Logic Level, Dual SO−8FL
• • • • • •
Small Footprint (5x6 mm) for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVMFD5853NLWF − Wettable Flanks |
ON Semiconductor |
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| 1 | NVMFD5853NWF | Power MOSFET ( Transistor ) NVMFD5853N, NVMFD5853NWF
Power MOSFET
40 V, 10 mW, 53 A, Dual N−Channel, Dual SO−8FL
Features
• Small Footprint (5x6 mm) for Compact Designs • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVMFD5853NWF − Wettable Flanks Product • AEC−Q101 |
ON Semiconductor |
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