Datasheet NVMD6N04R2G Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	NVMD6N04R2G	Power MOSFET ( Transistor ) NTMD6N04, NVMD6N04 Power MOSFET 40 V, 5.8 A, Dual N−Channel SOIC−8 Features • Designed for use in low voltage, high speed switching applications • Ultra Low On−Resistance Provides Higher Efficiency and Extends Battery Life − RDS(on) = 0.027 W, VGS = 10 V (Typ) − RDS(on) = 0.034 W, VGS	ON Semiconductor

NVMD6N04 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
NVMD6N04R2G	Power MOSFET ( Transistor ) NTMD6N04, NVMD6N04 Power MOSFET 40 V, 5.8 A, Dual N−Channel SOIC−8 Features • Designed for use in low voltage, high speed switching applications • Ultra Low On−Resistance Provides Higher Efficiency and Extends Battery Life − RDS(on) = 0.027 W, VGS = 10 V (Typ) − RD	ON Semiconductor
NVMD6N04	Power MOSFET ( Transistor ) NTMD6N04, NVMD6N04 Power MOSFET 40 V, 5.8 A, Dual N−Channel SOIC−8 Features • Designed for use in low voltage, high speed switching applications • Ultra Low On−Resistance Provides Higher Efficiency and Extends Battery Life − RDS(on) = 0.027 W, VGS = 10 V (Typ) − RD	ON Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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