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NTD5807N, NVD5807N Power MOSFET 40 V, 23 A, Single N−Channel, DPAK/IPAK Features • • • • • • • • • Low RDS(on) High Current Capability Avalanche Energy Specified AEC−Q101 Qualified and PPAP Capable − NVD5807N These Devices are Pb−Free and are RoHS Compliant http://onsemi
NTD5802N, NVD5802N Power MOSFET Features 40 V, Single N−Channel, 101 A DPAK • • • • • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses MSL 1/260°C AEC Q101 Qualified 100% Avalanche Tested
NTD5806N, NVD5806N Power MOSFET 40 V, 33 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) • High Current Capability • Avalanche Energy Specified • AEC−Q101 Qualified and PPAP Capable − NVD5806N • These Devices are Pb−Free and are RoHS Compliant Applications • CCFL Backlight
NTD5805N, NVD5805N Power MOSFET Features 40 V, 51 A, Single N−Channel, DPAK • • • • • • • • • Low RDS(on) High Current Capability Avalanche Energy Specified NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualifi
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